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Division of Physics and Technology of Wide-Band-Gap Semiconductor Nanostructures

ON4

Head of the division:
Prof. Dr. hab. Bogdan Kowalski, professor

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Deputy head of the division:
Prof. Dr. hab. Elżbieta Guziewicz, professor

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Secretary:
MSc. Anna Drzazga

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      • (+48) 22 843 70 01;
      • (+48) 22 843 66 01 wew.2911, 3380;

Main subjects of research:

  • Energy transfer, radiative and nonradiative recombination processes in bulk and thin films materials
  • Physics of spin interactions in semimagnetic semiconductors and layers
  • Energy structure and recombination processes of deep-level defects in semiconductors and insulators
  • Growth and characterization of bulk and epitaxial II-VI and III-V compounds
  • Band structure and surface studies by photoemission spectroscopy
  • High-temperature superconductivity
  • Theory of disordered systems

Materials studied:

  • AIIIBV compounds (epitaxial GaAlAs/GaAs, bulk InP, GaSb, InAsP - pure and doped)
  • Thin layers of AIIBIV compounds (including semimagnetic semiconductors, mostly doped)
  • Czochralski grown Si - RE implanted
  • High temperature superconductors - thin films
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