Research highlights

(a) Nanoscale journal cover featuring a model of quantum structure of the “superlattice” type selectively doped with europium (Eu) ions represented as red spheres. (b) Image of a {ZnCdO/ZnMgO} superlattice obtained using a transmission electron microscope, with the distribution of elements in different layers. (c) CIE standard-based chromaticity diagram for as-grown Eu-doped {ZnCdO/ZnMgO} superlattices and those annealed at different temperatures.

Nanoscale 17, 7055-7065 (2025)

Eu-doped ZnCdO/ZnMgO superlattices

Our scientists have discovered a method that enables efficient emission of photons from quantum superlattices in the red, green and ultraviolet wavelength ranges. This finding is crucial for potential applications in semiconductor light-emitting d...

Electron microscopy images of wurtzite GaAs nanowires with (Pb,Sn)Te topological crystalline insulator shells: (a) Scanning electron microscopy image of nanowires on GaAs(111)B substrate. (b) and (c) High resolution transmission electron microscopy (HRTEM) images; the distances between selected lattice planes are marked with parallel line sets and labelled with “d” with subscripts denoting Miller indices of the respective planes. (b) Plan view of the nanowire section (the nanowire placed on a TEM grid); T symbols on the interface indicate misfit dislocations; the inset in the lower right corner shows orientation of the nanowire with respect to the electron beam direction. (c) HRTEM image of the fragment of perpendicular nanowire cross section showing the interface between wurtzite GaAs core and cubic (Pb,Sn)Te shell.

Scientific Reports 14, 589 (2024)

Successful deposition of topological crystalline insulators on GaAs nanowires

A successful method has been discovered to obtain a coating of crystalline topological insulator (Pb,Sn)Te on GaAs nanowires. It overcomes the substantial problem of the significant mismatch between the crystal lattices of these materials, and all...

Nanoscale 17, 8111(2025)

ZrN as an innovative electrical contact for GaN nanowires

A thin metallic layer of zirconium nitride (ZrN) deposited on a substrate turns out to not only facilitate the formation of gallium nitride (GaN) nanowires, but also provides a low-resistance ohmic electrical contact to their bottom parts. This ph...

(a) The cover of Small magazine, showing an image of a single nanowire obtained by transmission electron microscopy. (b) Photoluminescence spectrum of GaN nanowires with HfOx and AlOx coatings, and bare GaN nanowires. (c) Monochromatic cathodoluminescence maps of the nanowires with partial HfOx and AlOx coatings, and bare GaN nanowires measured at 5K are shown in this panel.

Small 20, 2401139 (2024)

Enhancement of GaN nanowire luminescence by ultrathin oxide shells

Our scientists have discovered that a coverage of GaN nanowires with an ultrathin oxide shells significantly increases intensity of GaN luminescence and prevents photodegradation of the nanowires exposed to an environment. That finding is importan...

Figure 1 (a) Antimony triselenide nanostructures on a (111)B GaAs substrate measured by atomic force microscopy (AFM). (b) Crystallographic model illustrating three possible Sb2Se3 orientations on (111)B GaAs substrate. One dimensional nano-stripes grow always along the 011 directions of the GaAs substrate (c) A close-up of a AFM image showing the orientation of the nanostripes.

Nanoscale 16, 19477-19484 (2024)

Self-assembled Nano stripes of a one-dimensional van der Waals semiconductor

Our scientists have discovered that antimony triselenide spontaneously forms longitudinal high-quality crystal structures, nano-stripes, in the process of molecular beam growth. This quasi-one-dimensional van der Waals semiconductor may therefore ...

a): AgScP2S6 P-31c unit cell. b): A picture of a freshly cut, as-grown AgScP2S6 crystal. c): A visual depiction of the area structurally investigated by the raman confocal spectrometer. d): Raman scattering spectra of two distinguishable patterns in the highlighted, defect-rich (red) and defect-free zone (blue) of crystal surface shown in c).

Adv. Optical Mater. 2024, 2400481

Strain-Tunable luminescence appears in AgScP2S6 thanks to lattice defects

Nature's imperfections can sometimes unlock interesting and sought for properties. A team from IP PAS and MIT has found that structural point defects can serve as the origin of unusual photoluminescence in the visible range.

Formation of an EuAs layer on the InAs nanowire surface at lower temperatures and the reconstruction of the InAs nanowire into an Eu3In2As4 crystal at higher temperatures - experimental results and MD simulations.

Nature Nanotechnology (2024)

Topotaxial mutual-exchange growth of magnetic Zintl Eu3In2As4 axion insulator nanowires

The term "topotaxy" describes crystal growth process based on recrystallization in which the crystallographic orientation of the parent crystal determines that of the product composed crystal. Recently, a new method was developed and reported in t...

Artistic visualization of the non-Hermitian Fermi-Dirac distribution (shown in the background 3D plot) and its impact on persistent current transport in a superconducting-normal-superconducting junction (blue-green-blue). The junction is coupled to an external environment (violet), showcasing the dissipative nature of the quantum transport process.

Physical Review Letters 133, 086301 (2024)

Fermi-Dirac Distribution Reformulated in Non-Hermitian Systems

Researchers have extended the traditional Fermi-Dirac distribution to non-Hermitian systems. This new formalism provides a general framework to compute quantum many-body observables in equilibrium systems coupled to dissipative environments.