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Division of Physics and Technology of Wide-Band-Gap Semiconductor Nanostructures

Main subjects of research: Energy transfer, radiative and nonradiative recombination processes in bulk and thin films materials Physics of spin interactions in semimagnetic semiconductors and layers Energy structure and recombination processes of deep-level defects in semiconductors and insulators Growth and characterization of bulk and epitaxial II-VI and III-V compounds Band structure...

Publications

Some recent publications V. Stasiv, Ya. Zhydachevskyy, V. Stadnik, V. Hreb, V. Mykhaylyk, L. Vasylechko, A. Luchechko, T. Wojciechowski, P. Sybilski, A. Suchocki, Chemical tuning of photo- and persistent luminescence of Cr3+-activated ‑Ga2O3 by alloying with Al2O3 and In2O3, J. Alloys Compd. 982 (2024) 173827. V. Mykhaylyk, Y. Zhydachevskyy, H. Kraus, V. Stasiv, G. Leniec...

Collaboration

Institute of High Pressure Physics Unipress, PAS, Warsaw, Poland Gdańsk University, Gdańsk, Poland Kazimierz Wielki University in Bydgoszcz, Bydgoszcz, Poland Cardinal Stefan Wyszynski University, Warsaw, Poland Institute of Electronic Materials Technology, Lukasiewicz Center, Warsaw, Poland Institute of Nuclear Physics, Polish AS, Krakow, Poland Universidad Autónoma De Madrid,...

Equipment

Varian Cary 5000 UV-VIS-NIR spectrophotometer with DRA 2500 diffuse reflectance accessory Horiba/Jobin-Yvon Fluorolog-3 spectrofluorometer with Quanta-phi integrating sphere and few solid-state and PMT detectors for UV-VIS-NIR spectral range Bruker EMX-plus EPR spectrometer Mono Vista CRS+ Raman spectrometer with 325, 532 and 785 nm lasers Ekspla YAG:Nd laser with OPO Bomem DA-3...

ON4.1 Group of High-Pressure Spectroscopy

  • Kontakt do odziału:

    Head of the group:
    Dr. hab. Yaroslav Zhydachevskyy, prof. IF PAN
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The Group of the High-Pressure Spectroscopy ON 4.1 specializes in spectroscopic studies of optical materials in ambient and extreme conditions including high pressures, cryogenic and high temperatures. For pressure-dependent studies, diamond anvil cells (DAC) are used, allowing pressures of up to about 30 MPa at temperatures down to 4 K. Studies are being conducted on crystalline...

Research

New phosphor materials emitting in deep red and near-infrared (NIR) regions based on oxide crystals doped with transition metal ions such as Cr3+, Mn4+ or Fe3+ for applications as non-contact luminescent temperature and pressure sensors or biological markers. Studies of oxide phosphors doped with bismuth ions aimed to clarify the nature of Bi3+ ion emission occurring in these compounds in...

Group

  • Kontakt do odziału:

    Head of the group:
    Prof. Dr. hab. Yaroslav Zhydachevskyy
    This email address is being protected from spambots. You need JavaScript enabled to view it.

    Scientists
    Dr. hab. Agata Kamińska, prof. IF PAN
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    Dr. hab. Hanka Przybylińska, prof. IF PAN
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    Prof. Dr. hab. Andrzej Suchocki, professor
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    Dr. hab. Aleksander Wittlin, assistant profesor
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    Dr. Eng. Damian Włodarczyk, assistant
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    Dr. hab. Yaroslav Zhydachevskyy, prof. IF PAN
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    Engineering and technical staff
    MSc. Kamil Koroński
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    Ryszard Niegocki

    lic. Piotr Sybilski
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    PhD students
    MSc. Anastasiia Karabut
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    MSc. Saranya Narayanan
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    MSc. Ajeesh Kumar Somakumar
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    MSc. Vasyl Stasiv
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    Scholarship holders

Publications

2024    2023    2022    2021    2020 2024 M. Sarwar, R. Ratajczak, C. Mieszczyński, A. Wierzbicka, S. Gierałtowska, R. Heller, S. Eisenwinder, W. Woźniak, E. Guziewicz Defect accumulation in β-Ga2O3 implanted with Yb Acta Materialia 268, 119760 (2024), https://doi.org/10.1016/j.actamat.2024.119760 2023 S....

ON4.2 Group of Physics of Defects and ALD Technology

  • Kontakt do odziału:
    Head of the group:
    prof. dr hab. Elżbieta Guziewicz, professor
    This email address is being protected from spambots. You need JavaScript enabled to view it.
Group of Physics and Defects and ALD Technology ON4.2 deals with the growth and research of new semiconductor and dielectric materials, such as zinc, tin, gallium, hafnium, zirconium or titanium oxides, both undoped and doped in order to change their electrical, optical or magnetic properties. These materials are produced using the Atomic Layer Deposition, ALD, method as thin layers ranging...
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