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Insulator-based Field Effect Topological Transistor Structure

  • Tytuł patentu lub wzoru użytkowego: Insulator-based Field Effect Topological Transistor Structure
  • Tytuł patentu lub wzoru użytkowego (EN): Insulator-based Field Effect Topological Transistor Structure
  • Autorzy: Becerra Victor Fernandez, Trif Mircea, Hyart Timo
  • Urząd Patentowy i szczegóły prawa wyłączności: European Patent Office - EP3975275, data nadania (publikacji w European Patent Bulletin 25/13): 26.03.2025

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