Strain relaxation in InGaN/GaN epilayers by formation of V-pit defects studied by SEM, XRD and numerical simulations
- Autor: Stránská Matějová J., Horák L., Minárik P., Holy V., Grzanka E., Domagała J.Z., Leszczynski M.
- Tytuł publikacji: Strain relaxation in InGaN/GaN epilayers by formation of V-pit defects studied by SEM, XRD and numerical simulations
- DOI: https://doi.org/10.1107/S1600576720014764
- Rok: 2021
- Podkategoria: Journal of Applied Crystallography