Division of Physics of Semiconductors

Main subject of research:

• Experimental and theoretical studies of magnetic, thermal, optical, transport and magnetotransport properties of bulk crystals and thin layers of II-VI, IV-VI and III-V semimagnetic (diluted magnetic) semiconductors.
• Experimental studies of magnetic, optical and electron transport phenomena in semiconductor multilayer quantum structures based on Eu (or Mn) chalcogenides and IV-VI (or II-VI) semiconductors.
• Crystal growth:
  • Crystal growth of II-VI and IV-VI semimagnetic semiconductors with Mn, Eu and Gd (standard Bridgman and high pressure Bridgman techniques) e.g. CdMnTe, ZnMnTe (also heavily p-type doped with P)
  • Growth of monocrystals of substrate quality IV-VI (PbS, PbSe, PbTe) and II-VI (ZnTe, CdMnTe, CdZnTe) semiconductors employing physical vapor transport method.
  • Growth of ZnO and ZnO:Mn monocrystals employing chemical vapor transport method.
  • MBE growth of IV-VI semimagnetic semiconductors with Mn, Eu and Gd, e.g. PbMnTe, SnGdTe, SnMnTe and (Eu,Gd)Te-PbTe heterostructures

Major experimental and technological facilities:

• Lake-shore susceptometer-magnetometr system (temperature range 1.3-300K, magnetic field up to 9T).
• Magnetotransport set-ups (temperature range 1.5-300K, magnetic field up to 13T).
• Specific heat measurements set-up (temperature range 0.4-50K, magnetic field up to 6T).
• Photoluminescence set-up for visible and middle infrared range with YAG laser.
• Magnetooptical Kerr magnetometer (temperature range 1.5-300K, magnetic field up to 0.2T).
• Energy dispersive X-ray fluorescence analyzer for chemical analysis.
• Various technological facilities for the growth of bulk crystals of II-VI and IV-VI semiconductors by Bridgman method and by physical transport method.
• Technological facilities for the purification of Mn. Mg , Te, Cd and other metals and nonmetals relevant to semiconductor technology.
• Home-built MBE facility for the growth of layers of IV-VI semiconductors with Mn, Eu and Gd.