ON4.2 Group of Physics of Defects and ALD Technology

Group of Physics and Defects and ALD Technology ON4.2 deals with the growth and research of new semiconductor and dielectric materials, such as zinc, tin, gallium, hafnium, zirconium or titanium oxides, both undoped and doped in order to change their electrical, optical or magnetic properties. These materials are produced using the Atomic Layer Deposition, ALD, method as thin layers ranging from a few nanometers to approximately 1 micrometer thick. The fundamental research carried out is aimed at future applications of these materials in electronics, photovoltaics and medicine. The team also conducts unique research on electrical properties using Deep Level Transient Spectroscopy, DLTS, and Laplace DLTS, as well as investigations of magneto-optical properties using Optically Detected Magnetic Resonance, ODMR.