1.M.Godlewski

Application of photo - microwave techniques to deep level identification (invited)

Proc. XIII School on Phys. Semicond. Compounds, Jaszowiec 1984

(abstract)

2.M.Godlewski

Nonradiative recombination processes induced by deep impurities in semiconductors (invited)

Proc. XV School on Phys. Semicond. Compounds, Ustron-Jaszowiec 1986

Acta Phys. Polonica A71, 329 (1987)

3.W.M.Chen, M.Godlewski, B.Monemar and H.P.Gislason

Optical detection of the magnetic resonance (ODMR) for studies of the electronic and geometrical structure of complex defects in GaP (invited)

in Defects in Electronic Materials, eds: M.Stavola, S.J.Pearson and G.Davies

Proc. Fall Meeting of the Materials Research Soc., Boston 1987

Materials Res. Soc. Symposium Proc. vol.104, p.443 (1988)

4.D.Hommel, W.Busse, H.-E.Gumlich, D.Suisky, J.Roseler, K.Swiatek and M.Godlewski

Rare earth in II-VI compounds: non - linear optical excitation processes at low and high doping levels (invited)

Proc. 4th Intern. Conf. II-VI Compounds, Berlin (West) 1989

J. Cryst. Growth 101, 393 (1990)

5.M.Godlewski

Luminescence characterization of semiconductors (invited)

in Semiconductors and Rare Earth Based Materials, eds. C.A.J.Ammerlaan, F.F.Bekker, J.J.M.Franse, Nguyen Van Hieu and Than Duc Hien

Workshop on Materials Science, Hanoi 1990

World Scientific, Singapore 1991, p.18

6.M.Godlewski, K.Swiatek, A.Suchocki and J.M.Langer

Excitonic mechanisms of luminescence excitation of rare - earths and transition - metals in solids (invited)

Proc. ICL 90, Lisbon 1990

J. Luminescence 48/49, 23 (1991)

7.M.Godlewski and K.Swiatek

Excitonic processes in II - VI compounds doped with transition metal and rare earth impurities (invited)

Proc. 5th Intern. Conf. on II - VI Compounds Okayama, Japan 1991

J. Crystal Growth 117, 634 (1992)

8.M.Godlewski

Excitons bound at neutral complexes of transition metals (invited)

in The Second International School On Excited States Of Transition Elements Karpacz 1991, Eds: W. Strek, W. Ryba - Romanowski, J. Legendziewicz, B.Jezowska-Trzebiatowska

World Scientific, Singapore 1992, p.75

9.M.Godlewski

Excitonic mechanism of rare earth excitation in II-VI and III-V semiconductors (invited)

in Defect Engineering in Semiconductor Growth, Processing and Device Technology, Eds: S. Ashok, J. Chevallier, K. Sumino, E. Weber

MRS Spring Meeting, San Francisco, 1992

MRS Symposium Proceedings Vol.262, p.513

10.M.Godlewski

Foto-EPR (invited)

Sympozjum ''Optycznie Stymulowany Elektronowy Rezonans Paramagnetyczny'' Poznan 1992 (unpublished)

11.T.Gregorkiewicz, B.J.Heijmink Liesert, I.Tsimperidis, I.de Maat-Gersdorf, C.A.J.Ammerlaan, M.Godlewski and F.Scholz

Excitation and deexcitation mechanisms of rare-earth ions in III-V compounds: Optically detected microwave-induced impact ionization of Yb dopant in InP (invited)

in Rare Earth Doped Semiconductors Proc. MRS Spring Meeting, San

Francisco, 1993, ed: G.S. Pomrenke, P.B. Klein and D.W. Langer

(Materials Research Society, Pittsburgh, 1993)

Materials Research Society Symposium Proceedings Vol. 301, p.239

12.M.Godlewski

Charge transfer states of transition metal and rare earth ions: their role in recombination processes (invited)

Winter Symposium on Rare Earth Spectroscopy, Karpacz 1993

Acta Physica Polonica A84, 849 (1993)

13.M.Godlewski

Electroluminescence from RE activated materials - New concepts (invited)

Proc. XXII Int. School on Physics of semiconducting Compounds, Jaszowiec 1993

Acta Physica Polonica A84, 435 (1993)

14.M.Godlewski

Hot carrier effects on photoluminescence of III-V semiconductors (invited)

II Lithuanian-Polish Workshop on Solid State Physics and Technology, Warsaw, 1993

(abstract)

15.M.Godlewski

Hot carrier effects on photoluminescence spectra of bulk and low-dimensional semiconductor structures (invited)

Semiconductors: Fundamentals and Applications, Alushta, Ukraine, 1993

(abstract)

16.M.Godlewski

Defect identification by complementary ESR, ODMR and ODCR experiments (invited)

Proc. XV Conf. on Radio and Microwave Spectroscopy, RAMIS 1993

Molecular Physics Reports 5, 178 (1994)

17.M.Godlewski

Hot carrier effects on photoluminescence spectra of low-dimensional semiconductor structures (invited)

Third Lithuanian-Polish Workshop on Solid State Physics and Technology, Vilnius, Lithuania 1994

(abstract)

18.M.Godlewski

Spektroskopia magnetyczna defektow i procesow rekombinacji w zwiazkach i strukturach polprzewodnikowych (invited)

Sympozjum Defekty w Prostych i Zlozonych Polprzewodnikach, Wroclaw 21-23 XI 1994

(materials not published)

19.M.Godlewski

Rare earth ionization, carrier trapping and exciton binding (invited)

2nd International Conference on f-Elements, Helsinki, Finland, 1994

Journal of Alloys and Compounds 225, 41 (1995)

20.M.Godlewski, M.Surma and A.Zakrzewski

Recombination processes in II-VI compounds doped with transition metal ions (invited)

Third International School on Excited States of Transition Elements, Kudowa Zdroj 1994

J. Applied. Spectroscopy 62, 71 (1995)

21.M.Godlewski, J.P.Bergman and B.Monemar

Exciton dynamics in CdTe/CdMnTe, CdTe/CdMgTe and CdMnTe/CdMgTe multiquantum wells grown by molecular beam epitaxy (invited)

8'UFPS, Vilnius, Lithuania, 1995

Lithuanian Physics Journal 35, 563 (1995)

22.M.Godlewski

Optically detected cyclotron resonance - spectroscopy of hot carriers in semiconductors (invited)

2nd Dutch-Polish Colloquium on Condensed Matter Physics, Radziejowice, 1996

(abstract)

23.M.Godlewski

Excitation and recombination processes in rare earth doped II-VI semiconductors (invited)

in Rare Earth Doped Semiconductors II, Proc. MRS Spring Meeting, San Francisco, 1996, eds: S. Coffa, A. Polman and R.N. Schwartz,

MRS Symposium Proceedings Vol. 422, p.291, Materials Research Society,

Pittsburgh, Pensylvania, 1996

24.M.Godlewski

Recombination Processes in quantum wells of II-VI and III-V semiconductors (invited)

XII Ural International Winter School on Physics of Semiconductors, March 1997

(abstract only)

25.M.Godlewski

Dynamics of exciton recombination in low-dimensional heterostructures of II-VI semiconductors (CdTe/CdMnTe, ZnCdSe/ZnSe (invited)

Proc. DPC'97

J. of Luminescence 76/77, 174 (1998)

26.M.Bugajski and M.Godlewski

Optical probing of interface disorder in semiconductor nanostructures (invited)

Polish-Japanese Joint Seminar on Materials Analysis, September 1997

(abstract only)

27.M.Godlewski

Hot carrier spectroscopy and exciton dynamics in low dimensional DMS structures (invited)

Japanese-Polish Symposium on Diluted Magnetic Semiconductors, September 1997

Conference proceedings pp 18-21

28.M.Godlewski

GaN - Optical properties (invited)

VII Lithuanian - Polish Seminar, Kaunas, Lithuania, June 29-30, 1998

(abstract only)

Marek Godlewski - List of the review papers

1.M.Godlewski

On the application of the photo-EPR technique to the studies of photoionization, DAP recombination and non-radiative recombination processes (review)

Physica Status Solidi (a) 90, 11 (1985)

2.M.Godlewski, W.M.Chen and B.Monemar

Neutral P_Ga antisite related complex defects in bulk LEC GaP (review)

Defect and Diffusion Forum vol.62/63, 107 (1989)

3.W.M.Chen, B.Monemar and M.Godlewski

Magnetooptical characterization of isoelectronic complex defects in semiconductors (review)

Defect and Diffusion Forum vol.62/63, 133 (1989)

4.M.Godlewski and K.Swiatek

On Eu activated semiconducting compounds (review)

in Diluted Magnetic Semiconductors, ed. H.Jain

World Scientific, Singapore 1991, ch.16, p.621

5.M.Godlewski

Complementary ODMR and photo - ESR studies of deep donor - acceptor pair recombination processes in ZnS and GaP (review)

in Applied Magnetic Resonance, ed: C. von Borczyskowski

Special Issue on ODMR

Applied Magnetic Resonance 2, 349 (1991)

6.M.Godlewski, K.Swiatek and D.Hommel

Recombination processes in rare earth activated II-VI semiconductors (review)

in II-VI Semiconductors, ed. M.Jain

World Scientific, Singapore, 1993, p.131

7.M.Godlewski and A.Zakrzewski

Nonradiative recombination processes in II-VI luminophors (review)

in II-VI Semiconductors, ed. M.Jain

World Scientific, Singapore, 1993, p.205

8.M.Godlewski and M.Leskelä

Excitation and recombination processes during electroluminescence of rare earth-activated materials (review)

CRC Critical Reviews in Solid State and Materials Sciences 19, 199 (1994)

9.M.Godlewski, W.M.Chen and B.Monemar

Optical detection of cyclotron resonance for characterization of recombination processes in semiconductors (review)

CRC Critical Reviews in Solid State and Materials Sciences 19, 241 (1994)

10.T.L.Tansley, E.M.Goldys, M.Godlewski, B.Zhou and H.Y.Zuo

The Contribution of Defects to the Electrical and Optical Properties of Gallium Nitride (review)

chapter in the book "GaN and Related Materials", ed. S.Pearton, Gordon and Breach Publishers, 1997, p. 233-293

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