Anisotropic magnetoresistance in metals and semiconductors

Abstract
Anisotropy of electrical resistance in a conductive crystal (metal or semiconductor) can arise from various reasons, one of them being magnetic ordering. The most common means of manipulating magnetic order is externally applied magnetic field leading to the effect being called anisotropic magnetoresistance (AMR). History of AMR began in mid-19^th century with its observation in transition metals (TMs) and continues until nowadays. Dilute magnetic semiconductors are among systems where, compared to TMs, the microscopic mechanism of AMR could be analysed into greater detail: semiquantitatively accurate models can be simplified substantially to a level which allows for a transparent interpretation of the origins of AMR. In this context, extrinsic and intrinsic mechanisms will be discussed and recently topical materials where the TM only introduces magnetism while the electronic structure retains its semiconducting character. The scope of AMR has thus been extended beyond traditionally considered TM ferromagnets (which found their application in hard-drive read-heads) to systems with more complex magnetic order.

This event is supported by the Polish National Agency for Academic Exchange, grant no. BPI/STE/2021/1/00034/U/00001

Duration of the lecture: 45 min + question time
All Warsaw-4-Phd students (and others) very welcome!