Sunday, September 6
    afternoon: Arrival of the participants 

Monday, September 7

    morning:
H. P. Strunk, Erlangen, Germany
Relaxation of misfit-induced strain in semiconductor heterostructures

E. A. Fitzgerald, Cambridge, USA
Dislocations in relaxed SiGe/Si heterostructures

V. I. Vdovin, Moscow, Russia
Misfit dislocations in epitaxial heterostructures: mechanisms of generation and multiplication

B. Pichaud, Marseille, France
Dislocation mechanisms involved in the relaxation of heteroepitaxial semiconducting systems

J. Katcki, Warsaw, Poland
Formation of dislocations in InGaAs/GaAs heterostructures

    afternoon:
T. Wosinski, Warsaw, Poland
Quantum interference at misfit dislocations in III-V heterostructures

V. V. Kveder, Chernogolovka, Russia
Electronic properties of regular dislocations in silicon

S. Mil'shtein, Lowell, USA
Crystalline defects as enhancement and limits to microminiaturization

    evening: Get together at the bonfire

Tuesday, September 8

    morning:
R. Hull, Charlottesville, USA
Interactions of moving dislocations in semiconductors with point, line and planar defects

K. Sumino, Sendai, Japan
Impurity reaction with dislocations in semiconductors

S. Pizzini, Milan, Italy
Chemistry and physics of segregation of impurities at extended defects in silicon

M. Seibt, Goettingen, Germany
Structural and electrical properties of metal silicide precipitates in silicon

    evening:
A. George, Nancy, France
Dislocation nucleation and multiplication at crack tips in silicon

L. I. Fedina, Novosibirsk, Russia
Extended defects formation in Si crystals at clustering of intrinsic point defects studied by High Resolution Electron Microscopy

    Poster session A
 

Wednesday, September 9

    morning:
H. Alexander, Cologne, Germany
Kinks on partials of 60-degree dislocations in silicon as revealed by a new TEM-technique

Yu. L. Iunin & V. I. Nikitenko, Chernogolovka, Russia
Dislocation kink dynamics in crystals with deep Peierls potential relief

Y. Yamashita, Okayama, Japan
Hydrogen enhanced dislocation glides in silicon

V. V. Bulatov, Cambridge, USA
Dislocation mobility in Si: from atomic core to micron scale

    afternoon: Excursion

    evening: Conference dinner
 

Thursday, September 10

    morning:
T. Suski, Warsaw, Poland
Growth and properties of bulk single crystals of GaN; role of defects

Z. Liliental-Weber, Berkeley, USA
Extended defects in GaN

J.-L. Rouviere, Grenoble, France
Structural characterization of extended defects in GaN epilayers and AlN/GaN heterostructures by Transmission Electron Microscopy

    afternoon:
G. S. Salviati, Parma, Italy
CL and TEM study of optically active defects in GaN and AlGaN epilayers grown on sapphire

R. Jones, Exeter, UK
The interaction of oxygen with dislocations in GaN

    evening:
Panel discussion: The role of dislocations and other extended defects in GaN animated by E. Weber, Berkeley, USA

Poster session B
 

Friday, September 11

    morning:
H.-J. Moeller, Freiberg, Germany
Oxygen and carbon precipitation in multicrystalline solar silicon

T. V. Torchinskaya, Kiev, Ukraine
Recombination-enhanced microprecipitate formation in LPE GaAs structures

H. S. Leipner, Halle, Germany
Positron annihilation at dislocations and related point defects in semiconductors