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Plenary speakers

Opening plenary lecture

Hiroshi Amano, Nagoya University, Japan
Development of GaN based devices and future prospects

Plenary speakers

Rudolf Bratschitsch, Universität Münster, Germany
Atomically thin semiconductors light up

Aymeric Delteil, ETH Zurich, Switzerland
Spin-photon interface and distant entanglement of quantum dot spins

Mateusz Goryca, Institute of Experimental Physics, Warsaw University, Poland
Coherent Precession of an Individual 5/2 Spin

Martin Kamp, Universität Würzburg, Germany
High-performance interband cascade lasers for the 3-7 µm wavelength range

Andreas Knorr, Technische Universität Berlin, Germany
Ultrafast electron kinetics in graphene

Marcin Konczykowski, Ecole Polytechnique, France
Irradiation induced doping of topological insulators

Sebastian Loth, Max Planck Institute for Solid State Research, Stuttgart, Germany
Fundamentals of quantum-limited spintronics with atoms on surfaces

Robin Nicholas, Oxford University, United Kingdom
Quantum Hall effect in graphene: Breakdown, disorder and energy loss rates

Benjamin Piot, LNCMI, Grenoble, France
Using Nuclear Spins To Probe New Electronic States In Low Dimensional Systems

Artur Podhorodecki, Institute of Physics, Wroclaw University of Technology, Poland
Lanthanides doped nanocrystals - synthesis, optical properties and biomedical applications

Paweł Prystawko, Institute of High Pressure Physics of the Polish Academy of Sciences, Poland
Electronic Devices based on 2DEG in Nitride polar structures

Steven H. Simon, University of Oxford, United Kingdom
Topological Matter and Why You Should be Interested

Cezary Śliwa, Institute of Physics of the Polish Academy of Sciences, Poland
The physics of ferromagnetic semiconductors: from symmetry to micromagnetic properties

Claude Weisbuch, UCSB Santa Barbara, USA
Challenges and new concepts of semiconductor light emitters

Qi-Kun Xue, State Key Laboratory of Low-imensional Quantum Physics, Beijing, China
Atomic-Level Control of Quantum Material Growth: From Quantized Anomalous Hall Effect to Interface-Enhanced High Tc Superconductivity